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| ? reduced rfi and emi ? reduced snubbing ? extensive characterization of recovery parameters ? hermetic hexfred tm diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ultrafast, soft recovery diode hexfred v r = 200v i f(av) = 35a t rr = 35ns hfb35hb20 www.irf.com 1 parameter max. units v r cathode to anode voltage 200 v i f(av) continuous forward current, t c = 80c 35 i fsm single pulse forward current, t c = 25c 150 p d @ t c = 25c maximum power dissipation 125 w t j, t stg operating junction and storage temperature range -55 to +150 c case style to-254aa anode cathode (isolated base) pd-94100a 2 www.irf.com hfb35hb20 !"# parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 200 ? ? v i r = 100a v f forward voltage ? ? 1.25 i f = 20a, t j =-55c electrical characteristics @ t j = 25c (unless otherwise specified) l s series inductance ? 7.8 ? nh measured from anode lead to cathode lead , 6mm ( 0.025 in) from package c t junction capacitance, see fig. 3 ? ? 175 pf v r = 200v i r reverse leakage current ? ? 10 a v r = v r rated see fig. 2 ? ? 1.0 ma v r = v r rated, t j = 125c $ dynamic recovery characteristics @ t j = 25c (unless otherwise specified) $ parameter min. typ. max. units test conditions t rr reverse recovery time ? ? 35 ns i f = 1.0a,v r = 30v, di f /dt = 200a/s t rr1 reverse recovery time ? 45 ? ns t j = 25c see fig. t rr2 ? 68? t j = 125c 5 i f = 35a i rrm1 peak recovery current ? 3.3 ? t j = 25c see fig. i rrm2 ? 7.6 ? t j = 125c 6 v r = 160v q rr1 reverse recovery charge ? 76 ? t j = 25c see fig. q rr2 ? 270 ? t j = 125c 7 di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current ? 236 ? t j = 25c see fig. di (rec)m /dt2 during t b ? 1020 ? t j = 125c 8 thermal - mechanical characteristics parameter typ. max. units r thjc junction-to-case ? 1.0 wt weight 9.3 ? g c/w see fig. 1 ? ? 1.15 i f = 20a, t j = 25c ? ? 1.41 i f = 35a, t j = 25c ? ? 1.92 i f = 70a, t j = 25c ? ? 1.01 i f = 20a, t j =125c v www.irf.com 3 hfb35hb20 fig. 4 - maximum thermal impedance z thjc characteristics fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - maximum forward voltage drop vs. instantaneous forward current 0 40 80 120 160 200 reverse voltage - v r (v) 100 1000 10000 j u n c t i o n c a p a c i t a n c e - c t ( p f ) t j = 25c 0 40 80 120 160 200 reverse voltage - v r (v) 0.001 0.01 0.1 1 10 100 r e v e r s e c u r r e n t - i r ( a ) 125c 75c 25c 100c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 forward voltage drop - v f (v) 1 10 100 i n s t a n t a n e o u s f o r w a r d c u r r e n t - i f ( a ) tj = -55c tj = 125c tj = 25c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 4 www.irf.com hfb35hb20 fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt fig. 5 - typical reverse recovery vs. di f /dt, fig. 6 - typical recovery current vs. di f /dt, 100 1000 di f / dt - ( a / s ) 30 50 70 90 t r r - ( n s ) v r = 160v t j = 125c t j = 25c i f = 17.5a i f = 70a i f = 35a 100 1000 di f / dt - ( a / s ) 1 10 100 i r r m - ( a ) v r = 160v t j = 125c t j = 25c i f = 17.5a i f = 70a i f = 35a 100 1000 di f / dt - ( a / s ) 10 100 1000 q r r - ( n c ) v r = 160v t j = 125c t j = 25c i f = 17.5a i f = 70a i f = 35a 100 1000 di f / dt - ( a / s ) 100 1000 10000 d i ( r e c ) m / d t - ( a / s ) v r = 160v t j = 125c t j = 25c i f = 17.5a i f = 70a i f = 35a www.irf.com 5 hfb35hb20 fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f ! " ## # $!# %% # %" ## & ' ## () (( * ' " reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust case outline and dimensions ? to-254aa not e s : 1. dimens ioning & t ole rancing per as me y14.5m-1994. 2. al l dime ns ions are s hown in mill ime t e rs [inche s ]. 3. cont rol ling dimens ion: inch. 4. conforms to jedec outline to-254aa. 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 0.12 [.005] 13.84 [.545] 13.59 [.535] 13.84 [.545] 13.59 [.535] 3.81 [.150] 2x 17.40 [.685] 16.89 [.665] a 1.14 [.045] 0.89 [.035] 0.36 [.014] b a 3x b 20.32 [.800] 20.07 [.790] 3.78 [.149] 3.53 [.139] 123 17.40 [.685] 16.89 [.665] 3.81 [.150] 0.84 [.033] max. c ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 07/2006 pin as s ignment s 1 = cathode 2 = n/c 3 = anode |
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